SpringerOpen Newsletter

Receive periodic news and updates relating to SpringerOpen.

Open Access Open Badges Research Article

Using MEMS Capacitive Switches in Tunable RF Amplifiers

John Danson*, Calvin Plett and Niall Tait

Author Affiliations

Department of Electronics, Carleton University Ottawa, ON, Canada, K1S 5B6

For all author emails, please log on.

EURASIP Journal on Wireless Communications and Networking 2006, 2006:016518  doi:10.1155/WCN/2006/16518

Published: 16 May 2006


A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.